in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...

A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel device description is shown to differ from a classical device theory because of the specific nanowir...

Research on nanoscale semiconductor devices will elicit a novel understanding of biological systems. First, we discuss why it is necessary to build interfaces between cells and semiconductor nanoelectronics. Second, we describe some recent molecular biophysics studies with nanowire field effect transistor sensors. Third, we present the use of nanowire transistors as electrical recording devices...

Semiconductor nanowires represent powerful building blocks for next generation bioelectronics given their attractive properties, including nanometer-scale footprint comparable to subcellular structures and bio-molecules, configurable in nonstandard device geometries readily interfaced with biological systems, high surface-to-volume ratios, fast signal responses, and minimum consumption of energ...

Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. D...

An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.

S The electrostatics of nanowire transistors are studied by solving the Poisson equation self-consistently with the equilibrium carrier statistics of the nanowire. For a one-dimensional, intrinsic nanowire channel, charge transfer from the metal contacts is important. We examine how the charge transfer depends on the insulator and the metal/semiconductor Schottky barrier height. We also show th...

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Field-Effect-Transistors Metal-semiconductor junction is an efficient structure to control the carrier concentration of channel semiconductors, benefiting regulation mobility. In article number 2102323, Lei Liao, Johnny C. Ho, Zai-xing Yang, and co-workers demonstrate that by simply constructing metal-semiconductor junctions, peak hole mobility GaSb nanowire field-effect-transistor can be enhan...

Due to the extraordinary large surface-to-volume ratio, surface effects on semiconductor nanowires have been extensively investigated in recent years for various technological applications. Here, we present a facile interface trapping approach to alter electronic transport properties of GaAs nanowires as a function of diameter utilizing the acceptor-like defect states located between the intrin...